The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
Dec. 17, 2018
Spin Memory, Inc., Fremont, CA (US);
Satoru Araki, San Jose, CA (US);
SPIN MEMORY, INC., Wilmington, DE (US);
Abstract
A method of fabricating a magnetic storage device includes depositing a first conductive material. The method further includes electrically isolating distinct instances of the first conductive material to form a first wire extending along a first direction. The method further includes depositing, on the distinct instances of the first conductive material, a set of device layers. The method further includes electrically isolating distinct instances of the device layers to form spin orbit torque magnetic random access memory (SOT-MRAM) devices positioned on distinct instances of the first conductive material. The method further includes depositing, on the distinct instances of the device layers, a layer of a second conductive material and electrically isolating a plurality of distinct instances of the layer of the second conductive material to form a plurality of second wires extending along a second direction. The second direction is different from the first direction.