The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
Feb. 15, 2019
Unisantis Electronics Singapore Pte. Ltd., Singapore, SG;
Fujio Masuoka, Tokyo, JP;
Nozomu Harada, Tokyo, JP;
UNISANTIS ELECTRONICS SINGAPORE PTE. LTD., Singapore, SG;
Abstract
A Si substrate is etched through a first mask material layer formed on the Si substrate and serving as a mask, to form a Si pillar on a Si substrate. Subsequently, a second mask material layer formed so as to surround the side surface of the Si pillar is used as a mask to form a Si-pillar base part surrounding the Si pillar. Subsequently, the first and second mask material layers are used as masks to form a SiOlayer so as to occupy the whole section of the Si-pillar base part and connect to the Si substrate positioned in a region around the Si-pillar base part. Recessed portions are formed in the upper and lower regions of the SiOlayer. Subsequently, on the SiOlayer, an SGT is formed so as to include a gate insulating HfOlayer surrounding the Si pillar, a gate conductor TiN layer, Nlayers serving as the source or drain within the Si pillar, and a Si pillar serving as the channel between the Nlayers.