The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
Jun. 27, 2018
Applicant:
Flosfia Inc., Kyoto, JP;
Inventors:
Assignee:
FLOSFIA INC., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 29/04 (2006.01); H01L 29/778 (2006.01); H01L 29/737 (2006.01); H01L 21/02 (2006.01); H01L 29/08 (2006.01); H01L 27/12 (2006.01); C23C 16/40 (2006.01); H01L 29/66 (2006.01); C23C 16/448 (2006.01); H01L 29/786 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); C23C 16/40 (2013.01); C23C 16/4486 (2013.01); H01L 21/0242 (2013.01); H01L 21/0259 (2013.01); H01L 21/0262 (2013.01); H01L 21/02483 (2013.01); H01L 21/02488 (2013.01); H01L 21/02494 (2013.01); H01L 21/02565 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02581 (2013.01); H01L 21/02628 (2013.01); H01L 27/1229 (2013.01); H01L 29/04 (2013.01); H01L 29/0891 (2013.01); H01L 29/66969 (2013.01); H01L 29/737 (2013.01); H01L 29/7371 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 29/786 (2013.01); H01L 29/7869 (2013.01); C23C 16/44 (2013.01);
Abstract
In a first aspect of a present inventive subject matter, a layered structure includes a first semiconductor layer including an ε-phase crystalline oxide semiconductor with a first composition, and a second semiconductor layer including an ε-phase crystalline oxide semiconductor with a second composition that is different from the first composition of the first semiconductor layer, and the second semiconductor layer is layered on the first semiconductor layer.