The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2021

Filed:

Aug. 09, 2019
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Kosuke Horibe, Yokkaichi, JP;

Kei Watanabe, Yokkaichi, JP;

Toshiyuki Sasaki, Yokkaichi, JP;

Tomo Hasegawa, Yokkaichi, JP;

Soichi Yamazaki, Yokkaichi, JP;

Keisuke Kikutani, Yokkaichi, JP;

Jun Nishimura, Kuwana, JP;

Hisashi Harada, Yokkaichi, JP;

Hideyuki Kinoshita, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11578 (2017.01); G11C 16/04 (2006.01); H01L 27/11565 (2017.01); H01L 27/11573 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11578 (2013.01); G11C 16/0466 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01);
Abstract

A semiconductor device of an embodiment includes a control circuit arranged on a substrate, a first conductive layer arranged on the control circuit and containing a first element as a main component, a multilayer structure arranged on the first conductive layer and configured such that multiple second conductive layers and multiple insulating layers are alternately stacked on each other, a memory layer penetrating the multilayer structure and reaching the first conductive layer at a bottom portion, a first layer arranged between the control circuit and the first conductive layer and containing the first element as a main component, and a second layer arranged between the control circuit and the first layer and containing, as a main component, a second element different from the first element.


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