The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2021

Filed:

Aug. 05, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Rohit Kothari, Boise, ID (US);

Jason C. McFarland, Boise, ID (US);

Jason Reece, Boise, ID (US);

David A. Kewley, Boise, ID (US);

Adam L. Olson, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11556 (2017.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01L 27/11582 (2017.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); G03F 7/0035 (2013.01); H01L 27/11582 (2013.01);
Abstract

Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.


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