The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2021

Filed:

May. 24, 2019
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Claire Fenouillet-Beranger, Grenoble, FR;

Fabrice Nemouchi, Grenoble, FR;

Maud Vinet, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/822 (2006.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 27/06 (2006.01); H01L 21/8234 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8221 (2013.01); H01L 21/28518 (2013.01); H01L 21/76805 (2013.01); H01L 21/76889 (2013.01); H01L 21/76895 (2013.01); H01L 21/76898 (2013.01); H01L 21/823475 (2013.01); H01L 23/535 (2013.01); H01L 27/0688 (2013.01);
Abstract

A connection structure for microelectronic device with superposed semi-conductor layers including a conductor via that connects a lower face of an upper semi-conductor layer and an underlying conducting zone, the connection structure further including a silicide zone in contact with a lower face or with an inner face of the layer of the upper semi-conductor layer.


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