The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
Jun. 27, 2019
Applicant:
Nexchip Semiconductor Corporation, Anhui, CN;
Inventors:
Hongbo Zhu, Anhui, CN;
Yi Zhang, Anhui, CN;
Assignee:
Nexchip Semiconductor Corporation, Anhui, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/033 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 29/0649 (2013.01);
Abstract
A method for forming a semiconductor structure is disclosed. Among a stack of mask layers, any other layers above the lowermost thin film layer are subsequently removed to expose the lowermost thin film layer and then the lowermost thin film layer is separately removed by a dry etching process. This improves an etching uniformity of the lowermost thin film layer and ameliorates the issue of material residues. Moreover, thanks to the anisotropic characteristic of the dry etching process, lateral etching of side walls of a trench isolation structure can be mitigated.