The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Oct. 31, 2019
Nxp Usa, Inc., Austin, TX (US);
Hector Sanchez, Austin, TX (US);
NXP USA, Inc., Austin, TX (US);
Abstract
A circuit includes a plurality of voltage supply terminals including a lowest voltage supply terminal, an N-type finFET, and a current path electrically coupled to the lowest voltage supply terminal, where the N-type finFET transistor is located in the current path. The N-type finFET transistor includes at least one semiconductor fin, a gate structure made of a gate material located over the at least one fin, an end structure of the gate material located over an end of the at least one fin, a source electrode, and a drain electrode. The at least one fin is located over a well region, and the end structure is electrically tied to the well region, in which the well region is not electrically tied to the lowest voltage supply terminal.