The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Jul. 06, 2018
Te Connectivity Corporation, Berwyn, PA (US);
Matthew Mishrikey, Roslindale, MA (US);
Frank Peter Wahl, III, Ventura, CA (US);
TE CONNECTIVITY CORPORATION, Berwyn, PA (US);
Abstract
A bidirectional switch and a method of the bidirectional switch including, a first enhancement mode n-channel metal oxide semiconductor field effect transistor (n-MOSFET) and a second n-MOSFET electrically connected in a common source configuration. The emitter of an insulated gate bipolar transistor (IGBT) is further electrically connected to the common sources of the n-MOSFET. A control board regulates a first operation of the IGBT and an operation of the first field effect transistor. The control board additionally receives at least one measured characteristic, from a sensor and determines the measured characteristic is below a predetermined threshold. The control board then regulates an operation of the second field effect transistor and a second operation of the IGBT.