The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2021

Filed:

Feb. 26, 2018
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Shoichi Kabuyanagi, Yokkaichi, JP;

Yuuichi Kamimuta, Yokkaichi, JP;

Masumi Saitoh, Yokkaichi, JP;

Marina Yamaguchi, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/11507 (2017.01); H01L 29/51 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11507 (2013.01); H01L 27/24 (2013.01); H01L 29/516 (2013.01);
Abstract

A memory device according to an embodiment includes a first conductive layer; a second conductive layer; a ferroelectric layer provided between the first conductive layer and the second conductive layer and containing hafnium oxide; a paraelectric layer provided between the first conductive layer and the ferroelectric layer and containing a first oxide; and an oxide layer provided between the paraelectric layer and the ferroelectric layer and containing a second oxide having an oxygen area density lower than an oxygen area density of the first oxide.


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