The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10923436 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 16, 2021

Filed:

Mar. 25, 2019
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Bin Yang, San Diego, CA (US);

Kai Liu, San Diego, CA (US);

Xia Li, San Diego, CA (US);

Assignee:

Qualcomm Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/16 (2006.01); H01L 23/498 (2006.01); H04W 88/02 (2009.01); H04W 88/08 (2009.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49894 (2013.01); H01L 25/16 (2013.01); H04W 88/02 (2013.01); H04W 88/08 (2013.01);
Abstract

Certain aspects of the present disclosure provide apparatus for thermal matching of integrated circuits (ICs). One example apparatus generally includes a first substrate, a first IC disposed on the first substrate and having a second substrate, and a second IC disposed on the first substrate. The second IC may include a third substrate, a thermal conductivity adjustment region comprising different material than the third substrate, the thermal conductivity adjustment region being adjacent to a first side of the third substrate, and one or more electrical components formed in one or more layers of the second IC adjacent to a second side of the third substrate, wherein the first side and the second side are opposite sides of the third substrate, and wherein a thermal conductivity of the thermal conductivity adjustment region is closer to a thermal conductivity of the second substrate than a thermal conductivity of the third substrate.


Find Patent Forward Citations

Yang, Bin. (2021). Techniques for thermal matching of integrated circuits (U.S. Patent No. 10923436). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10923436

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