The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2021

Filed:

Jan. 21, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chun-Hsu Yen, Hsinchu, TW;

Chen-Hui Yang, Hsinchu, TW;

Yu Chuan Hsu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76834 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/76832 (2013.01); H01L 21/76852 (2013.01); H01L 23/5329 (2013.01); H01L 23/53295 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 2224/02206 (2013.01); H01L 2224/02215 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/0401 (2013.01); H01L 2924/14 (2013.01); H01L 2924/35121 (2013.01); H01L 2924/37001 (2013.01);
Abstract

A semiconductor structure includes a conductive structure over a first passivation layer. The semiconductor structure further includes a second passivation layer over the conductive structure and the first passivation layer. The second passivation layer has a first oxide film extending along a top surface of the first passivation layer, sidewalls and a top surface of the conductive structure. The second passivation layer further includes a second oxide film over a top surface of the first oxide film and a top surface of the conductive structure. The second passivation layer further includes a third oxide film extending along a top surface of the second oxide film, the sidewalls and the top surface of the conductive structure.


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