The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Jul. 15, 2020
Applicants:
Thomas E Seidel, Palm Coast, FL (US);
Michael I Current, San Jose, CA (US);
Inventors:
Thomas E Seidel, Palm Coast, FL (US);
Michael I Current, San Jose, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/3065 (2013.01); H01L 21/32135 (2013.01); H01L 21/31144 (2013.01);
Abstract
Processes for the localized etching of films on the sidewalls of non-planar 3D features such as a trench or a FinFET array. The etch process has a first step of an angle-directed ion implant beam, with the beam being self-aligned onto a localized region on a sidewall feature, that functionalizes the region for a second step that etches the ion implanted region.