The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2021

Filed:

May. 23, 2017
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Raluca Tiron, Saint-Martin-le-Vinoux, FR;

Nicolas Posseme, Sassenage, FR;

Xavier Chevalier, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/02 (2006.01); H01L 21/3115 (2006.01); H01L 21/311 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0271 (2013.01); H01L 21/0217 (2013.01); H01L 21/02118 (2013.01); H01L 21/31058 (2013.01); H01L 21/31133 (2013.01); H01L 21/31138 (2013.01); H01L 21/31155 (2013.01);
Abstract

A method for forming a functionalised guide pattern, includes forming a functionalisation layer on a substrate; depositing a protective layer on the functionalisation layer; forming a guide pattern on the protective layer that has a cavity opening onto the protective layer and a bottom and side walls; implanting ions with an atomic number of less than 10 in a portion of the protective layer located at the bottom of the cavity, such that the implanted portion can be selectively etched relative to the non-implanted portion; forming, in the cavity, a second functionalisation layer having first and second portions disposed on, respectively, the protective layer at the bottom of the cavity and the side walls of the cavity; and selectively etching the implanted portion and the first portion of the second functionalisation layer, to expose a portion of the functionalisation layer located at the bottom of the cavity.


Find Patent Forward Citations

Loading…