The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2021

Filed:

Feb. 21, 2018
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventors:

Marina Zelner, Burlington, CA;

Andrew Vladimir Claude Cervin, Oakville, CA;

Edward Horne, Burlington, CA;

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01G 7/06 (2006.01); H01L 21/3115 (2006.01); H01L 23/373 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01G 7/06 (2013.01); H01L 21/3115 (2013.01); H01L 23/3735 (2013.01); H01L 28/55 (2013.01); H01L 28/91 (2013.01);
Abstract

A device that incorporates teachings of the subject disclosure may include, for example, a multilayer initial oxide on a silicon substrate, where the multilayer initial oxide comprises amorphous polysilicates and a group one metal or a group two metal; a first electrode layer on the multilayer initial oxide; a dielectric layer on the first electrode layer; a second electrode layer on the dielectric layer, where an edge alignment spacing between at least one pair of corresponding electrode edges of two electrode layers of the capacitor is two microns or less; and connections for the first and second electrode layers. Other embodiments are disclosed.


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