The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2021

Filed:

Jan. 17, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Luca De Santis, Avezzano, IT;

Marco-Domenico Tiburzi, Avezzano, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 16/26 (2006.01); G11C 16/28 (2006.01); G11C 11/56 (2006.01); G11C 7/14 (2006.01); G11C 7/06 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 16/34 (2013.01); G11C 7/06 (2013.01); G11C 7/14 (2013.01); G11C 11/5642 (2013.01); G11C 16/0483 (2013.01); G11C 16/28 (2013.01); G11C 29/50016 (2013.01); G11C 16/26 (2013.01); G11C 16/349 (2013.01);
Abstract

Methods of operating a memory, as well as memory configured to perform such method, include applying an intermediate read voltage to a selected access line for a read operation, adding noise to a sensing operation while applying the intermediate read voltage, determining a value indicative of a number of memory cells of a plurality of memory cells connected to the selected access line that are activated in response to applying the intermediate read voltage to the selected access line, and determining a plurality of read voltages for the read operation in response to the value indicative of the number of memory cells of the plurality of memory cells that are activated in response to applying the intermediate read voltage to the selected access line.


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