The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2021

Filed:

Feb. 04, 2020
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Peter Rabkin, Cupertino, CA (US);

Kwang-Ho Kim, Pleasanton, CA (US);

Masaaki Higashitani, Cupertino, CA (US);

Assignee:

SanDisk Technologies LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/14 (2006.01); G11C 16/24 (2006.01); H01L 27/06 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 16/0483 (2013.01); G11C 16/24 (2013.01); G11C 16/3427 (2013.01); G11C 16/3445 (2013.01); H01L 27/0688 (2013.01);
Abstract

An apparatus for erasing non-volatile storage elements in a non-volatile memory system is disclosed. The apparatus has consistent speed in gate induced drain leakage (GIDL) erase across the operating temperature of the memory system. In one aspect, a voltage source outputs an erase voltage to NAND strings. The NAND strings may draw a GIDL erase current in response to the erase voltage. The amount of GIDL erase current for a given erase voltage is highly temperature dependent. The GIDL erase current may be sampled, and the erase voltage regulated based on the GIDL erase current. Therefore, the GIDL erase current, as well as erase speed, may be kept uniform across operating temperatures.


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