The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2021

Filed:

Jan. 21, 2020
Applicant:

Sumitomo Electric Device Innovations, Inc., Yokohama, JP;

Inventors:

Yoshihiro Yoneda, Yokohama, JP;

Takuya Okimoto, Yokohama, JP;

Kenji Sakurai, Yokohama, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); G02B 6/42 (2006.01); H01L 31/105 (2006.01); H01L 31/0304 (2006.01); H01L 31/0232 (2014.01);
U.S. Cl.
CPC ...
G02B 6/12004 (2013.01); G02B 6/4206 (2013.01); H01L 31/02327 (2013.01); H01L 31/03042 (2013.01); H01L 31/03046 (2013.01); H01L 31/105 (2013.01); G02B 2006/12078 (2013.01); H01L 2924/10337 (2013.01);
Abstract

A photodiode (PD) device that monolithically integrates a PD element with a waveguide element is disclosed. The PD device includes a conducting layer with a first region and a second region next to the first region, where the PD element exists in the first region, while, the waveguide element exists in the second region and optically couples with the PD element. The waveguide element includes a core layer and a cladding layer on the conducting layer, which forms an optical confinement structure. The PD element includes an absorption layer on the conducting layer and a p-type cladding layer on the absorption layer, which form another optical confinement structure. The absorption layer has a length at least 12 μm measured from the interface against the core layer.


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