The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2021

Filed:

Nov. 12, 2019
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Yasutaka Nakashiba, Ibaraki, JP;

Shinichi Watanuki, Ibaraki, JP;

Tohru Kawai, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); G02B 6/13 (2006.01); G02F 1/025 (2006.01); G02B 6/42 (2006.01);
U.S. Cl.
CPC ...
G02B 6/12 (2013.01); G02B 6/13 (2013.01); G02F 1/025 (2013.01); G02B 6/12004 (2013.01); G02B 6/4254 (2013.01); G02B 6/4283 (2013.01);
Abstract

A semiconductor device includes a substrate having a first surface and a second surface that have top and back relation, an insulating layer formed on the first surface of the substrate, and an optical waveguide formed on the insulating layer and formed of a semiconducting layer. A first opening is formed on the second surface of the substrate. The first opening overlaps the optical waveguide in plan view.


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