The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2021

Filed:

Nov. 27, 2017
Applicant:

Merck Patent Gmbh, Darmstadt, DE;

Inventors:

Yukiharu Uraoka, Ikoma, JP;

Yasuaki Ishikawa, Ikoma, JP;

Naofumi Yoshida, Kakegawa, JP;

Katsuto Taniguchi, Kakegawa, JP;

Toshiaki Nonaka, Kakegawa, JP;

Assignee:

Merck Patent GmbH, Darmstadt, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); C08G 77/08 (2006.01); G03F 7/012 (2006.01); G03F 7/075 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); C08G 77/08 (2013.01); G03F 7/012 (2013.01); G03F 7/0757 (2013.01); H01L 21/02126 (2013.01); H01L 21/02216 (2013.01); H01L 21/324 (2013.01); H01L 29/66742 (2013.01); H01L 29/78606 (2013.01);
Abstract

The present invention relates to providing a thin film transistor substrate containing a protective film, which can impart high driving stability. The thin film transistor substrate contains a thin film transistor and a protective film containing a cured product of a siloxane composition which covers the thin film transistor, wherein the thin film transistor has a semiconductor layer made of an oxide semiconductor, and wherein the siloxane composition contains polysiloxane, a fluorine-containing compound, and a solvent.


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