The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2021

Filed:

Feb. 15, 2019
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Po-Tsang Chen, Tainan, TW;

Wen-Liang Huang, Hsinchu, TW;

Chun-Chi Yu, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/027 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/0276 (2013.01); H01L 21/28141 (2013.01); H01L 29/4958 (2013.01); H01L 29/6656 (2013.01); H01L 29/6659 (2013.01);
Abstract

A method of forming gates includes the following steps. Dummy gates are formed on a substrate. A spacer material is deposited to conformally cover the dummy gates. A removing process is performed to remove parts of the spacer material and the dummy gates, thereby forming spacers and recesses in the spacers.


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