The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2021

Filed:

Oct. 31, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Praneet Adusumilli, Albany, NY (US);

Veeraraghavan S. Basker, Schenectady, NY (US);

Zuoguang Liu, Schenectady, NY (US);

Tenko Yamashita, Schenectady, NY (US);

Chun-Chen Yeh, Clifton Park, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 27/092 (2006.01); H01L 23/525 (2006.01); H01L 23/532 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76846 (2013.01); H01L 21/76895 (2013.01); H01L 21/76897 (2013.01); H01L 21/823871 (2013.01); H01L 23/525 (2013.01); H01L 23/535 (2013.01); H01L 23/5329 (2013.01); H01L 27/092 (2013.01); H01L 21/28518 (2013.01); H01L 2221/1063 (2013.01);
Abstract

A method for fabricating a semiconductor device includes depositing a sacrificial liner in self-aligned contact openings in first and second regions. The openings are filled with a sacrificial material. The second region is blocked with a first mask to remove the sacrificial material from the first region. The first mask is removed from the second region, and the sacrificial liner is removed from the first region. A first liner is formed in the openings of the first region, and first contacts are formed in the first region on the first liner. The first region is blocked with a second mask to remove the sacrificial material from the second region. The second mask is removed from the first region, and the sacrificial liner is removed from the second region. A second liner is formed in the openings of the second region, and second contacts are formed in the second region.


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