The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2021

Filed:

May. 03, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Keith Tatseun Wong, Los Gatos, CA (US);

Srinivas D. Nemani, Sunnyvale, CA (US);

Ellie Y. Yieh, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01); C23C 16/02 (2006.01); H01L 21/67 (2006.01); C01B 19/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02686 (2013.01); C01B 19/007 (2013.01); C23C 16/0209 (2013.01); C23C 16/305 (2013.01); C23C 16/45527 (2013.01); H01L 21/02499 (2013.01); H01L 21/02568 (2013.01); H01L 21/67098 (2013.01); C01P 2002/01 (2013.01); C01P 2002/20 (2013.01);
Abstract

Embodiments of the present disclosure relate to forming a two-dimensional crystalline dichalcogenide by positioning a substrate in an annealing apparatus. The substrate includes an amorphous film of a transition metal and a chalcogenide. The film is annealed at a temperature from 500° C. to 1200° C. In response to the annealing, a two-dimensional crystalline structure is formed from the film. The two-dimensional crystalline structure is according to a formula MX, M includes one or more of molybdenum (Mo) or tungsten (W) and X includes one or more of sulfur (S), selenium (Se), or tellurium (Te).


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