The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
Oct. 26, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yao-Wen Hsu, New Taipei, TW;
Ching-Hung Kao, Tainan, TW;
Po-Jen Wang, Taichung, TW;
Tsung-Han Tsai, Miaoli County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor wafer and a semiconductor wafer fabrication method are provided. The wafer includes a supporting substrate, a semiconductor substrate and a contact layer. The supporting substrate has a first surface and a second surface opposite to the first surface. The semiconductor substrate is disposed on the first surface of the supporting substrate, in which the semiconductor substrate is configured to form plural devices. The contact layer is disposed on the second surface of the supporting substrate to contact the supporting substrate, in which the contact layer is configured to contact an electrostatic chuck and has a resistivity of the contact layer smaller than a resistivity of the supporting substrate. In semiconductor wafer fabrication method, at first, a raw wafer is provided. Then, the contact layer is formed by using an implantation operation or a deposition operation.