The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2021

Filed:

Dec. 05, 2018
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Rong Xu, Wuhan, CN;

Wenbin Sun, Wuhan, CN;

Jie Su, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); C09K 13/06 (2006.01); C09K 15/04 (2006.01); H01L 21/311 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
C09K 13/06 (2013.01); C09K 15/04 (2013.01); H01L 21/31111 (2013.01); H01L 27/11582 (2013.01);
Abstract

Embodiments of compositions of a wet etchant and additive thereto for selectively etching silicon nitride to silicon oxide are disclosed. In an example, a composition of an additive to a phosphoric acid etchant includes an inhibitor and a dispersant. The inhibitor is absorbable on a surface of silicon oxide and capable of inhibiting etching of the surface of silicon oxide by the phosphoric acid etchant. The dispersant is capable of reacting with a by-product of a reaction between the phosphoric acid etchant and at least one of silicon oxide and silicon nitride and reducing a viscosity of the phosphoric acid etchant.


Find Patent Forward Citations

Xu, Rong. (2021). Additive to phosphoric acid etchant (U.S. Patent No. 10913893). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10913893

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