The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2021

Filed:

Mar. 16, 2018
Applicant:

Shin-etsu Handotai Co., Ltd., Tokyo, JP;

Inventors:

Yuki Tanaka, Nishigo-mura, JP;

Naoki Kamihama, Nishigo-mura, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B24B 37/015 (2012.01); C09G 1/02 (2006.01); H01L 21/306 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
B24B 37/015 (2013.01); C09G 1/02 (2013.01); H01L 21/30625 (2013.01); H01L 22/26 (2013.01);
Abstract

A method for polishing a silicon wafer, including: a first polishing step of polishing a silicon wafer surface by bringing the wafer held by a polishing head into sliding contact with a polishing pad attached to a turn table while supplying an aqueous alkaline solution containing abrasive grains onto the polishing pad, and a second polishing step of polishing the silicon wafer surface by bringing the wafer into sliding contact with the polishing pad while supplying an aqueous alkaline solution containing a polymer without containing abrasive grains onto the polishing pad, wherein the surface temperature of the polishing pad is controlled such that the surface temperature of the polishing pad in the second polishing step is higher than the surface temperature of the polishing pad in the first polishing step by 2° C. or more. This successfully achieves both of higher flatness and reduction in surface roughness.


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