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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10910557 B1

PDFFull Text
Date of Patent:
Feb. 02, 2021

Filed:

Sep. 13, 2019

Apparatus and methods of fabricating a magneto-resistive random access memory (mram) device

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Chi Ching, Santa Clara, CA (US);

Renu Whig, Chandler, AZ (US);

Rongjun Wang, Dublin, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:

Moser Taboada

Primary Examiner:

Caleen O Sullivan

Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 43/10 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01); H01F 41/32 (2006.01); H01F 10/32 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); G11C 11/161 (2013.01); H01F 10/329 (2013.01); H01F 10/3259 (2013.01); H01F 10/3272 (2013.01); H01F 41/32 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01);
Abstract

Methods and apparatus for forming a magnetic tunnel element are provided herein. A method of forming a magnetic tunnel element includes: depositing a magnetic layer atop a cobalt-chromium seed layer; and depositing a tunnel layer atop the magnetic layer to form a magnetic tunnel element, wherein the magnetic tunnel element has a TMR greater than 100. For example, a cobalt/platinum material or one or more layers thereof may be deposited directly atop a cobalt-chromium seed layer to produce improved devices.

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Ching, Chi. (2021). Apparatus and methods of fabricating a magneto-resistive random access memory (mram) device (U.S. Patent No. 10910557). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10910557

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