The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2021
Filed:
Jun. 22, 2016
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Nico Caspary, Munich, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/36 (2006.01); C30B 15/00 (2006.01); C30B 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/167 (2006.01); H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); C30B 15/04 (2006.01); C30B 15/20 (2006.01); C30B 33/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/36 (2013.01); C30B 15/00 (2013.01); C30B 15/04 (2013.01); C30B 15/20 (2013.01); C30B 29/06 (2013.01); C30B 33/00 (2013.01); H01L 29/0878 (2013.01); H01L 29/16 (2013.01); H01L 29/167 (2013.01); H01L 29/6606 (2013.01); H01L 29/7395 (2013.01); H01L 29/7396 (2013.01); H01L 29/7802 (2013.01); H01L 29/8611 (2013.01); H01L 29/7397 (2013.01);
Abstract
A method of manufacturing a silicon wafer includes extracting an n-type silicon ingot over an extraction time period from a silicon melt comprising n-type dopants, adding p-type dopants to the silicon melt over at least part of the extraction time period, so as to compensate an n-type doping in the n-type silicon ingot by 20% to 80%, and slicing the silicon ingot.