The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

Jun. 18, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junhyoung Kim, Seoul, KR;

Geunwon Lim, Yongin-si, KR;

Kwang-soo Kim, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11575 (2017.01); H01L 23/522 (2006.01); H01L 27/11565 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11575 (2013.01); H01L 23/5226 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01);
Abstract

A three-dimensional semiconductor memory device includes a plurality of first insulating layers vertically stacked on a peripheral logic structure, second insulating layers stacked alternately with the first insulating layers, conductive layers stacked alternately with the first insulating layers and disposed on sidewalls of the second insulating layers, through-interconnections penetrating the first insulating layers and the second insulating layers so as to be connected to the peripheral logic structure, and a first conductive line electrically connected to a plurality of first conductive layers of the conductive layers.


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