The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

Jan. 30, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Satoru Sugimoto, Kanagawa, JP;

Hiroki Hosaka, Kanagawa, JP;

Hayato Oishi, Tokyo, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/92 (2006.01); H01L 29/86 (2006.01); H01L 23/50 (2006.01); H01L 27/01 (2006.01); H01L 23/522 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/01 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 27/0688 (2013.01);
Abstract

Some embodiments include an integrated assembly having a capacitive unit which includes a plurality of capacitive subunits. A first conductive structure is under a first group of the capacitive subunits and is coupled with them. A second conductive structure is under a second group of the capacitive subunits and is coupled with them. A third conductive structure is over the capacitive subunits and is coupled with all of the capacitive subunits. A resistive structure extends under the first and second conductive structures. The resistive structure has a first-end-region under the first conductive structure and coupled with the first conductive structure. The resistive structure includes resistive lines extending from the first-end-region to second-end-regions.


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