The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2021
Filed:
Nov. 06, 2018
Applicant:
Lapis Semiconductor Co., Ltd., Kanagawa, JP;
Inventor:
Masanori Shindo, Miyazaki, JP;
Assignee:
LAPIS SEMICONDUCTOR CO., LTD., Yokohama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/02 (2013.01); H01L 24/03 (2013.01); H01L 21/6836 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/039 (2013.01); H01L 2224/0332 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03466 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/03828 (2013.01); H01L 2224/03849 (2013.01); H01L 2224/03903 (2013.01); H01L 2224/03914 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/056 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/0508 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/05027 (2013.01); H01L 2224/05084 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/119 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/11903 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13026 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2924/3656 (2013.01);
Abstract
A semiconductor device manufacturing method including preparing a semiconductor substrate including an electrode; forming a wire connected to the electrode; forming a first insulating film including a first opening that partially exposes the wire; forming a base portion that is connected to a portion of the wire exposed via the first opening, and that includes a conductor including a recess corresponding to the first opening; forming a solder film on a surface of the base portion; and fusing solder included in the solder film by a first heat treatment, and filling the recess with the fused solder.