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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10910232 B1

PDFFull Text
Date of Patent:
Feb. 02, 2021

Filed:

Aug. 21, 2018

Copper plasma etching method and manufacturing method of display panel

Applicants:

Samsung Display Co., Ltd., Yongin-si, KR;

Korea University Research and Business Foundation, Sejong Campus, Sejong, KR;

Inventors:

Sang Gab Kim, Seoul, KR;

MunPyo Hong, Seongnam-si, KR;

Hyun Min Cho, Hwaseong-si, KR;

Seong Yong Kwon, Andong-si, KR;

Ho Won Yoon, Seoul, KR;

Assignees:

SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;

KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION, SEJONG CAMPUS, Sejong, KR;

Attorney:

Cantor Colburn LLP

Primary Examiner:

Lan Vinh

Int. Cl.
CPC ...
H01L 21/3213 (2006.01); C23F 3/04 (2006.01); H01L 21/441 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01); H05K 3/06 (2006.01); H01L 23/532 (2006.01); H01L 29/786 (2006.01); H01L 29/49 (2006.01); H01L 21/311 (2006.01); H01J 37/00 (2006.01); C23F 4/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32136 (2013.01); C23F 3/04 (2013.01); C23F 4/00 (2013.01); H01J 37/00 (2013.01); H01L 21/02063 (2013.01); H01L 21/31053 (2013.01); H01L 21/31122 (2013.01); H01L 21/441 (2013.01); H01L 23/53242 (2013.01); H01L 29/4908 (2013.01); H01L 29/78606 (2013.01); H01L 29/78693 (2013.01); H05K 3/062 (2013.01); H01L 23/53228 (2013.01);
Abstract

A copper plasma etching method according an exemplary embodiment includes: placing a substrate on a susceptor in a process chamber of a plasma etching apparatus; supplying an etching gas that include hydrogen chloride into the process chamber; plasma-etching a conductor layer that include copper in the substrate; and maintaining a temperature of the susceptor at 10° C. or less during the plasma-etching.

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