The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2021
Filed:
May. 12, 2017
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Eiji Nakai, Tokyo, JP;
Harunaka Yamaguchi, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/223 (2006.01); H01L 21/02 (2006.01); H01S 5/30 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2233 (2013.01); H01L 21/02387 (2013.01); H01L 21/02538 (2013.01); H01S 5/3013 (2013.01); H01S 2304/04 (2013.01);
Abstract
An upper layer () made of non-doped III-V compound semiconductor is formed on a lower layer () made of non-doped III-V compound semiconductor. Impurity source gas is fed through vapor phase diffusion using an organometallic vapor-phase epitaxy device to add an impurity to the upper layer (). The vapor phase diffusion is continued with the feed of the impurity source gas stopped or with a feed amount of the impurity source gas lowered.
Nakai, Eiji. (2021). Method for manufacturing semiconductor device (U.S. Patent No. 10910222). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10910222
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile