The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

Sep. 20, 2018
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Hiroaki Hiramatsu, Toyama, JP;

Shinya Ebata, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); C23C 16/52 (2006.01); H01L 21/67 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/66 (2006.01); C23C 16/458 (2006.01); C23C 16/34 (2006.01);
U.S. Cl.
CPC ...
C23C 16/52 (2013.01); C23C 16/345 (2013.01); C23C 16/4586 (2013.01); C23C 16/45502 (2013.01); C23C 16/45546 (2013.01); C23C 16/45563 (2013.01); C23C 16/45578 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02211 (2013.01); H01L 21/02271 (2013.01); H01L 21/67017 (2013.01); H01L 21/67109 (2013.01); H01L 21/67248 (2013.01); H01L 21/67253 (2013.01); H01L 22/12 (2013.01);
Abstract

A method includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer by supplying a precursor to the substrate; and (b) forming a second layer by supplying a reactant to the substrate and modifying the first layer. The (a) includes: (a-1) supplying the precursor to the substrate from a first supply part while supplying an inert gas at a first flow rate, and supplying an inert gas at a second flow rate from a second supply part; and (a-2) supplying the precursor to the substrate while supplying the inert gas at a third flow rate from the first supply part, or supplying the precursor from the first supply pan while stopping the supply of the inert gas, and supplying the inert gas at a fourth flow rate from the second supply part.


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