The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

Jun. 13, 2019
Applicant:

Invensense, Inc., San Jose, CA (US);

Inventors:

Daesung Lee, San Jose, CA (US);

Dongyang Kang, San Jose, CA (US);

Chienlu Chang, Los Altos, CA (US);

Bongsang Kim, Mountain View, CA (US);

Alan Cuthbertson, San Jose, CA (US);

Assignee:

InvenSense, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 7/02 (2006.01); B81C 3/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00492 (2013.01); B81B 7/02 (2013.01); B81C 1/00269 (2013.01); B81C 1/00333 (2013.01); B81C 1/00388 (2013.01); B81C 1/00396 (2013.01); B81C 1/00428 (2013.01); B81C 1/00523 (2013.01); B81C 1/00547 (2013.01); B81C 3/001 (2013.01); B81B 2201/03 (2013.01); B81C 2201/0104 (2013.01); B81C 2201/0126 (2013.01); B81C 2201/0197 (2013.01); B81C 2203/0118 (2013.01); B81C 2203/03 (2013.01); B81C 2203/036 (2013.01);
Abstract

Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. Standoffs are formed on a second side of the device wafer. A first hardmask is deposited on the second side. A second hardmask is deposited on the first hardmask. A surface of the second hardmask is planarized. A photoresist is deposited on the second hardmask, wherein the photoresist includes a MEMS device pattern. The MEMS device pattern is etched into the second hardmask. The MEMS device pattern is etched into the first hardmask, wherein the etching stops before reaching the device wafer. The photoresist and the second hardmask are removed. The MEMS device pattern is further etched into the first hardmask, wherein the further etching reaches the device wafer. The MEMS device pattern is etched into the device wafer. The first hardmask is removed.


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