The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Dec. 11, 2015
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Kinyip Phoa, Beaverton, OR (US);
Jui-Yen Lin, Hillsboro, OR (US);
Nidhi Nidhi, Hillsboro, OR (US);
Chia-Hong Jan, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/8605 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8605 (2013.01); H01L 29/417 (2013.01); H01L 29/423 (2013.01); H01L 29/66166 (2013.01);
Abstract
Metal-oxide-polysilicon tunable resistors and methods of fabricating metal-oxide-polysilicon tunable resistors are described. In an example, a tunable resistor includes a polysilicon resistor structure disposed above a substrate. A gate oxide layer is disposed on the polysilicon resistor structure. A metal gate layer is disposed on the gate oxide layer.