The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Dec. 21, 2018
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Hyangkeun Yoo, Icheon-si, KR;
Yong Soo Choi, Seongnam-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 27/1159 (2017.01); G11C 11/22 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78391 (2014.09); G11C 11/223 (2013.01); G11C 11/2275 (2013.01); H01L 27/1159 (2013.01); H01L 29/513 (2013.01); H01L 29/516 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02271 (2013.01); H01L 29/40111 (2019.08); H01L 29/6684 (2013.01);
Abstract
A ferroelectric semiconductor device of the present disclosure includes a substrate, a ferroelectric layer disposed on the substrate, an electric field control layer that is disposed on the ferroelectric layer and has a predetermined internal electric field formed without the application of an external electric power to alter the magnitude of a coercive electric field of the ferroelectric layer, and a gate electrode layer disposed on the electric field control layer.