The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Nov. 27, 2013
General Electric Company, Schenectady, NY (US);
Richard Joseph Saia, Niskayuna, NY (US);
Stephen Daley Arthur, Glenville, NY (US);
Zachary Matthew Stum, Niskayuna, NY (US);
Roger Raymond Kovalec, Glenville, NY (US);
Gregory Keith Dudoff, Clifton Park, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
The subject matter disclosed herein relates to metal-oxide-semiconductor (MOS) devices, such as silicon carbide (SiC) power devices (e.g., MOSFETs, IGBTs, etc.) In an embodiment, a semiconductor device includes a gate oxide layer disposed on top of a semiconductor layer. The semiconductor device also includes a gate electrode having a tapered sidewall. Further, the gate electrode includes a polysilicon layer disposed on top of the gate oxide layer and a metal silicide layer disposed on top of the polysilicon layer.