The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Jan. 13, 2019
United Microelectronics Corp., Hsin-Chu, TW;
Chun-Sung Huang, Changhua County, TW;
Shen-De Wang, Hsinchu County, TW;
Chia-Ching Hsu, Yunlin County, TW;
Wang Xiang, Singapore, SG;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating semiconductor device includes the steps of: forming a first gate structure on a substrate; forming a second gate structure on the substrate and on one side of the first gate structure; forming a third gate structure on the substrate and on another side of the first gate structure; forming source/drain regions adjacent to the second gate structure and the third gate structure; and forming contact plugs to contact the first gate structure, the second gate structure, the third gate structure, and the source/drain regions.