The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Dec. 27, 2017
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Changhan Kim, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/1157 (2017.01); H01L 27/11582 (2017.01); H01L 29/792 (2006.01); H01L 27/11565 (2017.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 27/11578 (2017.01); H01L 27/11524 (2017.01);
U.S. Cl.
CPC ...
H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11565 (2013.01); H01L 27/11578 (2013.01); H01L 27/11582 (2013.01); H01L 29/40117 (2019.08); H01L 29/513 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01);
Abstract
Some embodiments include a memory cell having a conductive gate, and having a charge-blocking region adjacent the conductive gate. The charge-blocking region includes silicon oxynitride and silicon dioxide. A charge-storage region is adjacent the charge-blocking region. Tunneling material is adjacent the charge-storage region. Channel material is adjacent the tunneling material. The tunneling material is between the channel material and the charge-storage region. Some embodiments include memory arrays. Some embodiments include methods of forming assemblies (e.g., memory arrays).