The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Aug. 16, 2019
Applied Materials, Inc., Santa Clara, CA (US);
Anthony Renau, West Newbury, MA (US);
Min Gyu Sung, Essex, MA (US);
Sony Varghese, Manchester, MA (US);
Morgan Evans, Manchester, MA (US);
Naushad K. Variam, Marblehead, MA (US);
Tassie Andersen, Salem, MA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
The present disclosure is directed to structures and processing for three-dimensional transistor devices. In some approaches, a method may include providing a plurality of fin structures formed from a substrate, the plurality of fin structures disposed subjacent to a hard mask layer, and directing angled ions at the plurality of fin structures. The angled ions may form a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate, wherein the angled ions etch the plurality of fin structures to form a stack of isolated nanowires within the plurality of fin structures. The method may further include removing the hard mask layer, and forming a stopping layer over the stack of isolated nanowires.