The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Apr. 17, 2018
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/3205 (2006.01); C23C 16/02 (2006.01); C23C 16/00 (2006.01); H01L 21/285 (2006.01); C23C 16/54 (2006.01); C23C 16/455 (2006.01); C23C 16/509 (2006.01); C23C 16/458 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32053 (2013.01); C23C 16/00 (2013.01); C23C 16/0227 (2013.01); C23C 16/4586 (2013.01); C23C 16/45512 (2013.01); C23C 16/45565 (2013.01); C23C 16/5096 (2013.01); C23C 16/54 (2013.01); H01L 21/28518 (2013.01); H01L 21/28556 (2013.01); H01L 21/32135 (2013.01); H01L 21/32137 (2013.01); H01L 21/67167 (2013.01); H01L 21/68742 (2013.01); H01L 21/32138 (2013.01);
Abstract
A titanium silicide region forming method includes: performing a pretreatment to expose a clean surface of a silicon layer of a workpiece; forming a titanium-containing region and a titanium silicide region on the silicon layer after performing the pretreatment; and supplying a fluorine-containing gas to the workpiece including the titanium-containing region and the titanium silicide region so as to selectively etch the titanium-containing region with respect to the titanium silicide region.