The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2021

Filed:

May. 12, 2017
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Travis R. Taylor, Portland, OR (US);

Adam Bateman, Fremont, CA (US);

Todd A. Lopes, Livermore, CA (US);

Sankaranarayanan Ravi, Fremont, CA (US);

Silvia Aguilar, San Jose, CA (US);

Derek Witkowicki, Newark, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02057 (2013.01); H01L 21/6719 (2013.01); H01L 21/67109 (2013.01); H01L 21/67207 (2013.01); H01L 21/67248 (2013.01); H01L 21/67253 (2013.01); H01L 21/68742 (2013.01);
Abstract

A chamber is formed to enclose a processing region. A passageway is configured to provide for entry of a substrate into the processing region and removal of the substrate from the processing region. A substrate support structure is disposed within the processing region and configured to support the substrate within the processing region. At least one gas input is configured to supply one or more gases to the processing region. At least one gas output is configured to exhaust gases from the processing region. A humidity control device is configured to control a relative humidity within the processing region. At least one heating device is disposed to provide temperature control of the substrate within the processing region. The processing region of the chamber is directly accessible from a substrate handling module configured to operate at atmospheric pressure.


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