The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2021

Filed:

Nov. 07, 2018
Applicant:

Lawrence Livermore National Security, Llc, Livermore, CA (US);

Inventors:

Christopher J. Stolz, Lathrop, CA (US);

James A. Folta, Livermore, CA (US);

Paul B. Mirkarimi, Danville, CA (US);

Regina Soufli, Livermore, CA (US);

Christopher Charles Walton, Oakland, CA (US);

Justin Wolfe, Modesto, CA (US);

Carmen Menoni, Fort Collins, CO (US);

Dinesh Patel, Fort Collins, CO (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/08 (2006.01); G02B 5/08 (2006.01); G02B 3/00 (2006.01); C23C 14/34 (2006.01); C03C 17/34 (2006.01); C23F 4/00 (2006.01);
U.S. Cl.
CPC ...
G02B 3/00 (2013.01); C03C 17/3417 (2013.01); C23C 14/08 (2013.01); C23C 14/34 (2013.01); C23C 14/3442 (2013.01); C23F 4/00 (2013.01); G02B 5/0816 (2013.01); C03C 2218/33 (2013.01); Y10T 428/265 (2015.01);
Abstract

A method of making a laser mirror in which a mirror substrate has at least a one micron size nodular defect includes depositing a planarization layer over the mirror substrate and the nodular defect, depositing a layer of silicon dioxide over the planarization layer, and etching away a portion of the layer of silicon dioxide. The method also includes thereafter, depositing a layer of hafnium dioxide over the layer of silicon dioxide and repeating the steps of depositing a layer of silicon dioxide, etching away a portion of the layer of silicon dioxide, and depositing a layer of hafnium dioxide until the nodular defect is reduced in size a predetermined amount.


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