The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2021
Filed:
Dec. 18, 2017
Intel Corporation, Santa Clara, CA (US);
Vivek De, Beaverton, OR (US);
Krishnan Ravichandran, Saratoga, CA (US);
Harish Krishnamurthy, Beaverton, OR (US);
Khondker Ahmed, Hillsboro, OR (US);
Sriram Vangal, Portland, OR (US);
Vaibhav Vaidya, Portland, OR (US);
Turbo Majumder, Portland, OR (US);
Christopher Schaef, Hillsboro, OR (US);
Suhwan Kim, Hillsboro, OR (US);
Xiaosen Liu, Portland, OR (US);
Nachiket Desai, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Spin Hall Effect (SHE) magneto junction memory cells (e.g., magnetic tunneling junction (MTJ) or spin valve based memory cells) are used to implement high entropy physically unclonable function (PUF) arrays utilizing stochastics interactions of both parameter variations of the SHE-MTJ structures as well as random thermal noises. An apparatus is provided which comprises: an array of PUF devices, wherein an individual device of the array comprises a magnetic junction and an interconnect, wherein the interconnect comprises a spin orbit coupling material; a circuitry to sense values stored in the array, and to provide an output; and a comparator to compare the output with a code.