The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2021
Filed:
Aug. 20, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Woo-bin Song, Hwaseong-si, KR;
Hei-seung Kim, Suwon-si, KR;
Mirco Cantoro, Hwaseong-si, KR;
Sang-woo Lee, Seoul, KR;
Min-hee Cho, Suwon-si, KR;
Beom-yong Hwang, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a channel layer located on a substrate, the channel layer including a conductive oxide, a gate structure located on the channel layer, the gate structure including a gate electrode and gate spacers located on both sidewalls of the gate electrode, and source and drain regions located on both sides of the gate structure in recess regions having a first height from a top surface of the channel layer. The source and drain regions are configured to apply tensile stress to a portion of the channel layer located under the gate structure.