The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2021

Filed:

Feb. 19, 2019
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventor:

Naoaki Sudo, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/14 (2006.01); G11C 16/04 (2006.01); G11C 16/30 (2006.01); G11C 16/08 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01);
Abstract

The present invention provides a semiconductor memory device capable of performing rapid erasing while reducing power consumption. In the flash memory of the present invention, the voltage of the P well is detected by the voltage detecting unitduring the erasing operation. When the voltage is lower than the threshold value, it is determined that the off leakage current of the selection transistor of the non-selection block is large, and the voltage of the global word line at the time of applying the next erase pulse is increased. When the voltage is above the threshold value, it is determined that the off leakage current is small, and the voltage of the global word line at the time of applying the next erase pulse is maintained.


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