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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10894935 B1

PDFFull Text
Date of Patent:
Jan. 19, 2021

Filed:

May. 18, 2018

Composition for removing silicone resins and method of thinning substrate by using the same

Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Dongwoo Fine-chem Co., Ltd., Iksan-si, KR;

Inventors:

In-goo Kang, Hwaseong-si, KR;

Sung-bae Kim, Seongnam-si, KR;

Baik-soon Choi, Anyang-si, KR;

Sue-ryeon Kim, Hwaseong-si, KR;

Young-taek Hong, Hwaseong-si, KR;

Sang-tae Kim, Iksan-si, KR;

Kyong-ho Lee, Osan-si, KR;

Hyung-pyo Hong, Seongnam-si, KR;

Seong-min Kim, Iksan-si, KR;

Assignees:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

DONGWOO FINE-CHEM CO., LTD., Iksan-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Gregory R Delcotto

Int. Cl.
CPC ...
C11D 1/00 (2006.01); C11D 3/28 (2006.01); C11D 3/20 (2006.01); C11D 3/30 (2006.01); C11D 7/50 (2006.01); H01L 21/683 (2006.01); H01L 21/02 (2006.01); C11D 7/32 (2006.01); C11D 11/00 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); C11D 3/00 (2006.01); H01L 21/304 (2006.01); C11D 3/43 (2006.01); C11D 3/24 (2006.01); C09J 183/04 (2006.01); B32B 43/00 (2006.01); H01L 21/67 (2006.01); H01L 25/065 (2006.01); H01L 23/00 (2006.01); B32B 38/10 (2006.01); C11D 7/26 (2006.01);
U.S. Cl.
CPC ...
C11D 7/5013 (2013.01); C11D 1/00 (2013.01); C11D 3/0073 (2013.01); C11D 3/2096 (2013.01); C11D 3/245 (2013.01); C11D 3/28 (2013.01); C11D 3/30 (2013.01); C11D 3/43 (2013.01); C11D 7/3209 (2013.01); C11D 11/0047 (2013.01); H01L 21/02057 (2013.01); H01L 21/304 (2013.01); H01L 21/31133 (2013.01); H01L 21/6835 (2013.01); H01L 21/76898 (2013.01); B32B 38/10 (2013.01); B32B 43/006 (2013.01); B32B 2457/14 (2013.01); C09J 183/04 (2013.01); C11D 7/267 (2013.01); C11D 7/3281 (2013.01); H01L 21/67051 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 25/0657 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68318 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06586 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01);
Abstract

Compositions for removing silicone resins and methods of thinning a substrate by using the same, as well as related methods, apparatus and systems for facilitating the removal of silicone resins are provided. The compositions for removing silicone resins, may include a heterocyclic solvent and an alkyl ammonium fluoride salt represented by a formula, (R)NF, wherein R is a C1 to C4 linear alkyl group. Silicone resins may be effectively removed by using the compositions since the compositions exhibit an excellent decomposition rate with respect to the silicone resins that remain on a semiconductor substrate in a process of backside grinding of the semiconductor substrate, backside electrode formation, or the like.

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