The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2021

Filed:

Jun. 24, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jae Kyeong Jeong, Seoul, KR;

Yun Heub Song, Seoul, KR;

Chang Hwan Choi, Seoul, KR;

Hyeon Joo Seul, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 27/11558 (2017.01); H01L 27/11597 (2017.01); H01L 27/1156 (2017.01); H01L 27/11582 (2017.01); H01L 27/24 (2006.01); H01L 27/11514 (2017.01); H01L 27/11553 (2017.01); H01L 27/11556 (2017.01); H01L 27/11551 (2017.01); H01L 27/1158 (2017.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 27/1156 (2013.01); H01L 27/1158 (2013.01); H01L 27/11514 (2013.01); H01L 27/11551 (2013.01); H01L 27/11553 (2013.01); H01L 27/11556 (2013.01); H01L 27/11558 (2013.01); H01L 27/11582 (2013.01); H01L 27/11597 (2013.01); H01L 27/249 (2013.01); H01L 27/2481 (2013.01);
Abstract

The semiconductor device includes a substrate, a stack structure including gate patterns and interlayer insulating films that are alternately stacked on the substrate, an insulating pillar extending in a thickness direction of the substrate within the stack structure, a polycrystalline metal oxide film extending along a sidewall of the insulating pillar between the insulating pillar and the stack structure, a liner film having a transition metal between the insulating pillar and the polycrystalline metal oxide film, and a tunnel insulating film, a charge storage film, and a blocking insulating film which are disposed in order between the polycrystalline metal oxide film and the gate patterns.


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