The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
May. 11, 2019
Zhanming LI, West Vancouver, CA;
Guanhou Luo, Foshan, CN;
Yue Fu, Coquitlam, CA;
Wai Tung NG, Thornhill, CA;
Yan-fei Liu, Kingston, CA;
Zhanming Li, West Vancouver, CA;
Guanhou Luo, Foshan, CN;
Yue Fu, Coquitlam, CA;
Wai Tung Ng, Thornhill, CA;
Yan-Fei Liu, Kingston, CA;
Other;
Abstract
Use of gallium nitride (GaN) semiconductor material for power devices is challenging due to low yield caused by high defect density on the wafer. Device layout on the wafer, chip probing, and device packaging increase the yield of large area power devices. Device dies containing a plurality of lower-power sub-devices are used to achieve high power ratings, by connecting only functional sub-devices together in the package, while being tolerant of defective sub-devices by selectively excluding the defective sub-devices. The packages and methods are particularly relevant to GaN power switching devices such as high electron mobility transistors (GaN HEMT).